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Emerging concepts of non-volatile memories are more and more investigated to replace conventional charge storage-based devices like EEPROM or Flash. One of these promising memory concepts is called Resistive Switching Memory (ReRAM). Such memory is based on a switching mechanism controlled in current and/or voltage, between two distinct resistive states depending upon the material nature integrated in memory element. To lead such memory concept to a memory circuit or even, to a product, a big effort has to be done to forecast tools necessary to design and test this emerging memory. In this paper, a particular technology of ReRAM memories is introduced. First, an electrical model (ELDO-like) of a MIM-based (Metal/Insulator/Metal) ReRAM memory element is presented. Then, this model is used for the robustness assessment of ReRAM memory element in presence of actual defects inherent to CMOS process steps. Based on this electrical model, a big hurdle has been broken between material physics, design and test. Thus, new methods and solutions could be developed in the field of design and test for ReRAM memories.