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Engineering of the nonradiative transition rates in modulation-doped multiple-quantum wells

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3 Author(s)
J. V. D. Veliadis ; Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA ; J. B. Khurgin ; Y. J. Ding

The feasibility of the enhancement of the acoustic-phonon limited intersubband transition rate through impurity scattering has been theoretically investigated in double asymmetric-coupled quantum wells. The dependence of the acoustic-phonon rate on the barrier thickness and the effect of the position of the δ-doped region on the impurity rate have been treated rigorously. A 10-Å-doped region with a 10 10-cm-2-sheet density can enhance the acoustic-phonon transition limit by more than an order of magnitude. This allows for the design of intersubband lasers in which population inversion between acoustic-phonon limited discrete conduction-band states is achieved by impurity scattering and control of barrier thickness

Published in:

IEEE Journal of Quantum Electronics  (Volume:32 ,  Issue: 7 )