Referenced Items are not available for this document.
In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.
Published in:
Electron Devices, IEEE Transactions on
(Volume:56
,
Issue:
9
)
Date of Publication: Sept. 2009
- Page(s):
- 2144 - 2149
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 10828873
- Digital Object Identifier :
- 10.1109/TED.2009.2026089
- Product Type:
- Journals & Magazines
- Date of Publication :
- 21 July 2009
- Date of Current Version :
- 18 August 2009
- Issue Date :
- Sept. 2009
- Sponsored by :
- IEEE Electron Devices Society
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