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A New Isolation Technology for Automotive Power-Integrated-Circuit Applications

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6 Author(s)
Jingmeng Sun ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Jiang, F.X.C. ; Lingpeng Guan ; Zhibin Xiong
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In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 9 )