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High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency

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6 Author(s)
Hoi Wong, Man ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Yi Pei ; Brown, D.F. ; Keller, Stacia
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A high-performance N-face GaN metal-insulator-semiconductor high-electron-mobility transistor was fabricated. A dual-AlN back-barrier scheme was developed using polarization engineering to provide a large total dipole moment, which allowed enhanced modulation doping for a higher 2-D electron gas density without parallel conduction. Devices with 0.6-mum gate length showed an fT and f max of 17 and 58 GHz, respectively. A highest power-added efficiency (PAE) of 71% at 4 GHz was measured in these devices with 20-V drain bias. At 28 V, an output power density of 6.4 W/mm with 67% PAE was achieved.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )