Cart (Loading....) | Create Account
Close category search window

Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Chen, Te-Chih ; Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Chang, Ting-Chang ; Fu-Yen Jian ; Chen, Shih-Ching
more authors

This letter studies the nonvolatile memory characteristics of polycrystalline-silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon (SONOS) structure. As the device was programmed, significant trap-assisted gate-induced drain leakage current was observed due to the extra programmed electrons trapped in the nitride layer which lies above the gate-to-drain overlap region. In order to suppress the leakage current and thereby avoid signal misidentification, we utilized band-to-band hot hole injection into the nitride layer. Because the injected hot holes can remain in the nitride layer after repeated Fowler-Nordheim erase and program operations, this method can exhibit good sustainability in such a SONOS-TFT memory device.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )

Date of Publication:

Aug. 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.