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A study of effects of deflector position variation on leakage currents in ballistic deflection transistors

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7 Author(s)
Kaushal, V. ; Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Lowell, Lowell, MA, USA ; Guarino, G. ; Qiaoyan Yu ; Donaldson, W.R.
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In this paper, leakage mechanisms in ballistic deflection transistors (BDT) are studied using Finite Element Analysis (FEA) based on a simple conductive media model, a BDT simulator based on the semi-classical billiard model, and experimental measurements. In BDT, by simply tailoring the architecture, the electron transport can be, to a large extent, modified and controlled to reduce leakage. Since the triangular deflector plays a significant role in the operation of BDT, the models take into account its position variation along the Y-axis. Experimental results also discuss leakages with the deflector position (DP) variation. Structural modifications in the BDT help in analysing the device functionality, and understanding the relationship between right drain output current (IRD), left drain output current (ILD) and top drain leakage currents (ITD) with device geometry.

Published in:

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Date of Conference:

2-5 June 2009