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High pressure hydrogen annealing effect of CESL nitride stressor MOSFETs with metal gate/high-k dielectric on the performance and reliability

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12 Author(s)
Min Sang Park ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea ; Kyong Taek Lee ; Seung Ho Hong ; Seung Hyun Song
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We present high pressure hydrogen annel (HPHA) effects in two types contact etch stop layer (CESL) nitride MOSFETs. Performances increased in both samples of using rapid thermal chemical vapor deposition (RTCVD) and plasma enhanced chemical vapor deposition (PECVD) nitride stress layers, but reliability only degraded in PECVD samples after HPHA.

Published in:

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Date of Conference:

2-5 June 2009

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