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Effects of high pressure hydrogen anneal process on performance and reliability in HfO2/SiO2 dielectric with contact etch stop layer stressor

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11 Author(s)
Seung Hyun Song ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea ; Min Sang Park ; Kyong Taek Lee ; Hyun Sik Choi
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Effects of high pressure hydrogen annealing (HPHA) process on a nitride contact etch stop layer (CESL) MOSFETs is studied. High interface quality by HPHA leads to improved on-current (Ion) and transconductance (Gm) while reliability degradation is acceptable.

Published in:
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Date of Conference: 2-5 June 2009

Page(s):
225 - 228
E-ISBN :
978-1-4244-4696-4
Print ISBN:
978-1-4244-4695-7
INSPEC Accession Number:
10790239
Conference Location :
Traverse City, MI
Digital Object Identifier :
10.1109/NMDC.2009.5167526
Product Type:
Conference Publications

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