By Topic

Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lee, Chen-Guan ; Microelectronics Research Center, University of Texas at Austin, Texas 78758, USA ; Park, Sungjin ; Ruoff, Rodney S. ; Dodabalapur, Ananth

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3176216 

The characteristics of thin-film transistors (TFTs) with pentacene active layers and source/drain contact layers consisting of either Au, Au coated with highly reduced graphene oxide (HRG), or plain HRG, are compared. It is shown that the incorporation of HRG as an interfacial material between gold source/drain contacts and pentacene in TFT devices results in improved electrical characteristics. The effect of the HRG layer is to improve the gold/pentacene interface leading to better charge injection, lower losses at the interface, and, consequently, higher effective carrier mobility.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 2 )