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Multi-functional annealing using flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for high-k/metal gated CMOS devices

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5 Author(s)
Takayuki Aoyama ; Semiconductor Leading Edge Technologies, Inc (Selete), Onogawa 16-1, Tsukuba 305-8569, Japan ; Shin-ichi Kato ; Takashi Onizawa ; Kazuto Ikeda
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We have presented functional annealing data using the FSP-FLA (flexibly-shaped-pulse flash lamp annealing), together with some examples of the multi-functionality. First, we showed that the FSP-FLA can control thermal budget whilst sustaining high dopant activation, recovering crystalline defects, and controlling thermal diffusion length. Secondly, by combining impulses from conventional FLA and the trapezoidal pulse of the FSP-FLA, we can improve BTI (bias-temperature instability) lifetime and carrier mobility (mueff), without degrading Rs-Xj (sheet resistance and junction depth) characteristics. In addition, we showed the FSP-FLA pulse for preheat control. Therefore, we have a high confidence that FLA has evolved to the 2nd generation with the FSP-FLA system and it will be a main-stream annealing method for scaled high-k/metal gated devices in the near future.

Published in:

Junction Technology, 2009. IWJT 2009. International Workshop on

Date of Conference:

11-12 June 2009