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Growth mechanism of epitaxial NiSi2 in atomic-scale for Schottky source/drain in Silicon Nanowire transistors

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5 Author(s)
S. Migita ; Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, 16-1 Onogawa, 305-8569, Japan ; Y. Morita ; N. Taoka ; W. Mizubayashi
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Silicon nanowire (SNW) field effect transistors (FET) which consist of silicon nanowire channels with less than 10 nm diameters and gate-all-around structures are targeted as future CMOS devices. This paper presents the atomic-scale understanding of epitaxial NiSi2 growth and discusses its contribution to silicidation of SNWs.

Published in:

Junction Technology, 2009. IWJT 2009. International Workshop on

Date of Conference:

11-12 June 2009