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Physics based modeling of non-quasi-static effects in SiGe-HBTs

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3 Author(s)
Jacob, J. ; Dept. of Electr. Eng., IIT Madras, Chennai, India ; DasGupta, A. ; Chakravorty, A.

A physics based model for the non-quasi-static (NQS) effects occurring in heterojunction bipolar transistors (HBTs) is presented. Following classical transistor theory, partitioned charge based (PCB) approach is extended to additionally model small-signal frequency-dependent (trans-) conductances. A new large-signal model is implemented in Verilog-A, and is tested for small-signal behavior. Results are compared with numerical device simulation, and its improvement is checked against the results obtained from PCB approach and widely used 2nd order LCR sub-circuit.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009