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Memristive unipolar switching characteristics of PLD grown NiO films have been investigated for nonvolatile memory applications. Grazing incidence XRD study reveals the polycrystalline behavior of NiO films. AFM topography shows a smooth surface of NiO having RMS roughness ~ 3.0 nm. By applying a proper voltage bias and compliance, Pt/NiO/Pt structures exhibited unipolar resistive switching from one state to the other state. The device is found to be switched ON and OFF at a very low voltage. This resistive switching behavior is reproducible and the ratio between the high resistance and low resistance states can be as high as orders of 102. The switching phenomena have been explained using the rupture and formation mechanisms of conducting filaments.