By Topic

Influence of SiN composition on program and erase characteristics of SANOS-type flash memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
C. Sandhya ; Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India ; U. Ganguly ; B. Apoorva ; C. Olsen
more authors

Composition of the silicon-nitride charge trap layer strongly impacts electron and hole trap properties. This significantly impacts charge trap flash memory performance and reliability. Important trade-offs between program/erase (P/E) levels (memory window) and retention loss is shown and critical trends identified. Increasing the Si-richness of the SiN layer improves memory window by increasing erase efficiency. E-state retention characteristics are improved but at the expense of higher P-state retention loss.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009