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Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental observations indicate the high potential of HfAlOx for MIM capacitor applications.