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Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model

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4 Author(s)
Rao, R. ; Dept. of Electr. Eng., I.I.T. Madras, Chennai, India ; Katti, G. ; DasGupta, N. ; DasGupta, A.

The effect of random dopant fluctuation in the channel of a fully depleted SOI-MOSFET is investigated using analytical models for threshold voltage and subthreshold current. Analytical models are based on solving 2D Poisson's equation considering non-uniformly doped channel. Since analytical models are faster compared to numerical simulations, a large number of devices can be simulated.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009