By Topic

Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rathnamala Rao ; Department of Electrical Engineering, I.I.T. Madras, Chennai- 600036, India ; Guruprasad Katti ; Nandita DasGupta ; Amitava DasGupta

The effect of random dopant fluctuation in the channel of a fully depleted SOI-MOSFET is investigated using analytical models for threshold voltage and subthreshold current. Analytical models are based on solving 2D Poisson's equation considering non-uniformly doped channel. Since analytical models are faster compared to numerical simulations, a large number of devices can be simulated.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009