By Topic

Study of charge density at InxGa1-xN/GaN heterostructure interface

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tasbirun Nahian Upal ; Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, 1000, Bangladesh ; Md. Ahsan Uddin ; Mainul Hossain ; Faisal Jahan
more authors

Energy-bands in undoped InxGa1-xN/GaN heterostructures have been simulated using 1D Poisson/Schrodinger solver: A Band Diagram Calculator, by self-consistent solution of Schrodinger and Poisson equations. The formation of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) were observed at the interface of undoped InxGa1-xN/GaN based heterostructures. Charge concentrations throughout the structures were analyzed which show the confinement of charge in a quantum well at the heterointerface. Charge density as a function of depth from surface to substrate has also been presented in this paper. The formation of 2DEG and 2DHG and the dependence of their densities on layer thickness, alloy composition and temperature have been investigated.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009