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Study of charge density at InxGa1-xN/GaN heterostructure interface

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5 Author(s)
Upal, T.N. ; Dept. of Appl. Phys., Electron. & Commun. Eng., Univ. of Dhaka, Dhaka, Bangladesh ; Uddin, M.A. ; Hossain, M. ; Jahan, F.
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Energy-bands in undoped InxGa1-xN/GaN heterostructures have been simulated using 1D Poisson/Schrodinger solver: A Band Diagram Calculator, by self-consistent solution of Schrodinger and Poisson equations. The formation of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) were observed at the interface of undoped InxGa1-xN/GaN based heterostructures. Charge concentrations throughout the structures were analyzed which show the confinement of charge in a quantum well at the heterointerface. Charge density as a function of depth from surface to substrate has also been presented in this paper. The formation of 2DEG and 2DHG and the dependence of their densities on layer thickness, alloy composition and temperature have been investigated.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009