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High-frequency noise measurements on MOSFETs with channel-lengths in sub-100 nm regime

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6 Author(s)
Pradeep R. Patalay ; University of Louisiana at Lafayette, LA, U.S.A. ; R. P. Jindal ; Hisashi Shichijo ; S. Martin
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High-Frequency signal and noise measurements on 40 nm, 80 nm, and 110 nm, gate-length MOS transistors are performed. On-wafer measurements of S-parameters up to 18 GHz yield an accurate small-signal RF device model with gm in excess of 1000 mS/mm. Noise contributions due to gate resistance, substrate resistance, source and drain resistances, substrate current and induced-gate noise are found to be small in comparison with total observed noise. The noise parameter gamma is bias dependent and increases as channel-length decreases. The observed values are well above the ideal value of 2/3 consistent with previously published results.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009