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An analytical model for deep submicron MOSFETs based on quantum charge-sheet approximation including the drift-diffusion equation is presented. In this model the surface potential is obtained analytically considering quantum mechanical effects in the inversion region. The field dependent mobility variations, velocity saturation of carriers and secondary effects such as DIBL and channel length modulation have been incorporated in this model, which shows excellent match with experimental data and two-dimensional device simulator results. The model calculates the drain current and the channel conductance accurately for sub-100 nm devices with minimum number of model parameters.