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Recent advances in charge trap flash memories

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10 Author(s)
Sandhya, C. ; Centre for Excellence in Nanoelectron., Indian Inst. of Technol. Bombay, Mumbai, India ; Singh, P.K. ; Gupta, S. ; Rohra, H.
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This paper reviews recent advances in Charge Trap Flash (CTF) memories. CTFs are predicted to replace the traditional floating-gate flash devices beyond the 32 nm node. The paper focuses on work done at IIT Bombay in the areas of both nitride-based SONOS devices as well as nanocrystal (NC)-based devices. For SONOS devices, results are presented for optimization of the nitride layer to obtain the best characteristics, and the simulation of the program/erase transients. For NC devices, experimental characteristics of single and dual layer cells, as well as simulation results are presented.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009