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Unified compact modeling for Bulk/SOI/FinFET/SiNW MOSFETs

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11 Author(s)
Xing Zhou ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Guojun Zhu ; Guan Huei See ; Junbin Zhang
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This paper describes seamless transitions among various MOS devices, ranging from bulk and partially/fully-depleted SOI to double-gate FinFETs and silicon-nanowire MOSFETs. The underlying governing equations for various structures are outlined, which provide the motivation for unifying MOS compact models with the unified regional modeling (URM) approach.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009

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