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In this paper, we derive an analytical model of drain current for an Undoped 4-T asymmetric double gate MOSFET based on the solution of the 1D Poisson's equation. The equations are valid for both the subthreshold and superthreshold regime of operation. The current is formulated using the Pao-Sah's double integral method. The model can be used to study the effect of the different gate voltages, gate work functions and the oxide thickness of the front and back gate on the drain current of the undoped DG MOSFET. The results have been verified with a 2D device simulator and a good agreement is obtained.