By Topic

Stimulated Raman up conversion of a helicon by band-gap energy plasmons in a semiconductor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kumar, Pawan ; Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India ; Tripathi, V.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3168439 

Stimulated Raman up conversion of a helicon wave in a semiconductor, where free carrier plasma frequency equals band-gap energy divided by Planck’s constant, is investigated. The stimulated electron hole recombination drives a Langmuir wave. The free carrier density oscillations associated with the Langmuir wave couple with the free carrier oscillatory velocities due to the helicon and derive a sum frequency radiation. The radiation and helicon exert a ponderomotive force on free carriers that influences the Langmuir wave.

Published in:

Journal of Applied Physics  (Volume:106 ,  Issue: 1 )