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Stimulated Raman up conversion of a helicon by band-gap energy plasmons in a semiconductor

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2 Author(s)
Kumar, Pawan ; Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India ; Tripathi, V.K.

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Stimulated Raman up conversion of a helicon wave in a semiconductor, where free carrier plasma frequency equals band-gap energy divided by Planck’s constant, is investigated. The stimulated electron hole recombination drives a Langmuir wave. The free carrier density oscillations associated with the Langmuir wave couple with the free carrier oscillatory velocities due to the helicon and derive a sum frequency radiation. The radiation and helicon exert a ponderomotive force on free carriers that influences the Langmuir wave.

Published in:

Journal of Applied Physics  (Volume:106 ,  Issue: 1 )