Close category search window
 

Grazing incidence small angle x-ray scattering study of the structure of nanoporous ultralow-k dielectrics prepared by plasma enhanced chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jousseaume, V. ; CEA-LETI-MINATEC, 17 rue des martyrs, 30854, Grenoble Cedex 9, France ; Gourhant, O. ; Zenasni, A. ; Maret, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3168521 

This paper focuses on the structure of nanoporous SiOCH thin films deposited using a porogen approach by plasma enhanced chemical vapor deposition (PECVD). The grazing incidence small angle x-ray scattering signal demonstrates the existence of a biphase pattern in hybrid films, deposited by PECVD. After porogen removal, there are few differences between pore pattern of optimized ultraviolet (UV) illuminated and thermally treated samples: anisotropy of the pore pattern is observed in both samples, probably due to the porogen degradation. Finally, a kinetic study of porogen degradation by UV shows that the porous structure develops in only a few minutes.

Published in:
Applied Physics Letters  (Volume:95 ,  Issue: 2 )

Date of Publication: Jul 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.