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High-Q RF-MEMS tunable evanescent-mode cavity filter

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3 Author(s)
Park, S.-J. ; Qualcomm Inc., San Diego, CA, USA ; Reines, I. ; Rebeiz, G.

This paper presents a high-Q tunable evanescent-mode cavity filter using capacitive RF MEMS cantilever switches with a frequency coverage of 5.5-4.3 GHz. The filter results in an insertion loss of 2.6-5.3 dB over the tuning range and a 3-dB bandwidth of 55-40 MHz (fractional bandwidth of %1). The measured Qu of the filter is 511-273 over the frequency range, which is to our knowledge, the best report Q using RF-MEMS technology.

Published in:

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Date of Conference:

7-12 June 2009