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Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

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2 Author(s)
Parker, A.E. ; Dept. of Phys. & Eng., Macquarie Univ., Sydney, NSW, Australia ; Rathmell, J.G.

A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power DC measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

Published in:

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Date of Conference:

7-12 June 2009