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CMOS wideband LNA design using integrated passive device

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6 Author(s)
Hsien-Ku Chen ; Nat. Appl. Res. Lab., Nat. Chip Implementation Center, Hsinchu, Taiwan ; Yuan-Chia Hsu ; Ta-Yeh Lin ; Da-Chiang Chang
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A complete CMOS wideband low noise amplifier (LNA) has been designed with off-chip passive device. The input inductor with integrated passive device (IPD) is used for input matching and NF improvement due to its high quality factor (Q). The large inductance of 4.7 nH of choke is used for covering the bandwidth of 2~11 GHz, which is stacked on the top of CMOS for chip-area saving. Besides, the interaction between CMOS and IPD for passive devices is also considered in the work. The CMOS wideband LNA is with the merits of cost-effective and high-performance compared to the pure CMOS circuit.

Published in:

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Date of Conference:

7-12 June 2009