The interfacial structure of InAs/Ga1-xInxSb superlattices is investigated by high-resolution transmission electron microscopy imaging. We have shown that high-resolution electron microscopy with quantitative image matching can enable the relative orientation of the closely separated atomic species in InAs and Ga1-xInxSb to be resolved. We have then used this capability to determine interfacial bonds. The shift in the atomic positions associated with this modulation may lead to distortions of the interfacial structure of Ga1-xInxAs-like. The misfit dislocations in InSb-like interface are the primary mechanism for accommodating the lattice mismatch.