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2 ,\times, 2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55- \mu m Applications

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7 Author(s)
Zegaoui, M. ; Inst. d''Electron. de Microelectron. et de Nanotechnol. (IEMN), USTL, Villeneuve d''Ascq, France ; Choueib, N. ; Harari, J. ; Decoster, D.
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This letter demonstrates a 2times2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive integrated optical circuit with an optimized X-crossing. The passive structure was designed using a two-dimensional beam propagation method (BPM) and the entire InP-InGaAsP-InP DOS was designed using a semivectorial three-dimensional BPM. The fabricated 2times2 InP switching matrix heterostructure with lambdag=1.3 mum exhibits optical crosstalk as low as -30.5 dB for drive current of 52 mA at 1.55-mum wavelength. Maximum crosstalk change of 4 dB is measured under optical polarization variation.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 19 )