IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:30 Issue:8 Help

1580-V–40- \hbox {m}\Omega \cdot \hbox {cm}^{2} Double-RESURF MOSFETs on 4H-SiC (\hbox {000}\bar{\hbox {1}})

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Noborio, Masato ; Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan ; Suda, J. ; Kimoto, T.

Double-reduced-surface-field (RESURF) MOSFETs with N2O-grown oxides have been fabricated on the 4H-SiC (0001macr) face. The double-RESURF structure is effective in reducing the drift resistance, as well as in increasing the breakdown voltage. In addition, by utilizing the 4H-SiC (0001macr) face, the channel mobility can be increased to over 30 cm2 / V ldr s, and hence, the channel resistance is decreased. As a result, the fabricated MOSFETs on 4H-SiC (0001macr) have demonstrated a high breakdown voltage (VB) of 1580 V and a low on-resistance (RON) of 40 mOmega ldr cm2. The figure-of-merit (VB 2/RON) of the fabricated device has reached 62 MW/cm2, which is the highest value among any lateral MOSFETs and is more than ten times higher than the "Si limit".

Published in:
Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )

Date of Publication: Aug. 2009

Page(s):
831 - 833
ISSN :
0741-3106
INSPEC Accession Number:
10793192
Digital Object Identifier :
10.1109/LED.2009.2023540
Product Type:
Journals & Magazines
Date of Publication :
14 July 2009
Date of Current Version :
24 July 2009
Issue Date :
Aug. 2009
Sponsored by :
IEEE Electron Devices Society

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.