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Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics

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4 Author(s)
Padovani, A. ; DISMI, Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy ; Larcher, L. ; Dawei Heh ; Bersuker, G.

A novel physics-based drift-diffusion model of TANOS program transients is employed to investigate electron trapping and detrapping dynamics in a nitride trapping layer. Trapping process is found to be independent from the energy of injected electrons, while detrapping is dominated by trap-to-band tunneling. Modeling of the trapped-charge evolution during program transients allows one to extract physical characteristics of the traps and provides useful information for the optimization of TANOS memories.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )

Date of Publication:

Aug. 2009

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