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Solution-processed InGaZnO-based thin film transistors for printed electronics applications

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10 Author(s)
Jun Hyung Lim ; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea ; Jong Hyun Shim ; Jun Hyuk Choi ; Jinho Joo
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This letter reports the utility of using the sol-gel process for exploring the library of multicomponent ZnO-based oxides as an active layer of thin film transistors. We chose InGaZnO as a starting material and modulated the Ga content to examine the potential of this material. Increasing the Ga ratio from 0.1 to 1 brought about a dynamic shift in the electrical behavior from conductor to semiconductor. This exploratory work critically helped us fabricate a device with robust device performance (a mobility of 1∼2 cm2V-1s-1 for the 400 °C-sintered samples and 0.2 cm2V-1s-1 for the 300 °C-sintered samples).

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 1 )

Date of Publication:

Jul 2009

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