Referenced Items are not available for this document.
Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25degC to 85degC. Based on the calculated activation energy, ten years of data retention is extrapolated.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
8
)
Date of Publication: Aug. 2009
- Page(s):
- 876 - 878
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10793172
- Digital Object Identifier :
- 10.1109/LED.2009.2024623
- Product Type:
- Journals & Magazines
- Date of Publication :
- 10 July 2009
- Date of Current Version :
- 24 July 2009
- Issue Date :
- Aug. 2009
- Sponsored by :
- IEEE Electron Devices Society
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