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6.3-GHz Film Bulk Acoustic Resonator Structures Based on a Gallium Nitride/Silicon Thin Membrane

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10 Author(s)

This letter describes the fabrication and the morphological and microwave characterization of film bulk acoustic resonator structures, supported on very thin GaN membranes. We have demonstrated, by employing both white-light profilometry as well as X-ray diffraction, the low deflection and low stress of the GaN membranes supporting the resonator metallization. Using as test structure two FBAR structures connected in series, by a floating backside metallization, we have obtained resonance frequencies of 6.3 GHz for a 0.5-mum-thick membrane. The quality factor, at 6.3 GHz, was higher than 1100.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )

Date of Publication:

Aug. 2009

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