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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:56 Issue:8 Help

Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

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4 Author(s)
Ghetti, A. ; Numonyx, R&D-Technol. Dev., Agrate Brianza, Italy ; Monzio Compagnoni, C. ; Spinelli, A.S. ; Visconti, A.

This paper presents a comprehensive investigation of random telegraph noise (RTN) in deca-nanometer Flash memories, considering both the nor and the nand architecture. The statistical distribution of the threshold voltage instability is analyzed in detail, evidencing that the slope of its exponential tails is the critical parameter determining the scaling trend for RTN. By means of 3-D TCAD simulations, the slope is shown to be the result of cell geometry, atomistic substrate doping, and random placement of traps over the cell active area. Finally, the slope dependence on cell geometry (width, length, and oxide thickness), doping, and bias conditions is summarized in a powerful formula that is able to predict the RTN instabilities in deca-nanometer Flash memories.

Published in:
Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 8 )

Date of Publication: Aug. 2009

Page(s):
1746 - 1752
ISSN :
0018-9383
INSPEC Accession Number:
10791361
Digital Object Identifier :
10.1109/TED.2009.2024031
Date of Publication :
07 July 2009
Date of Current Version :
21 July 2009
Issue Date :
Aug. 2009
Sponsored by :
IEEE Electron Devices Society

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