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Inversion-channel GaN MOSFET using atomic-layer-deposited Al2O3 as gate dielectric

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10 Author(s)
Chang, Y.C. ; Dept. Mater. Sci. & Eng, Natl Tsing Hua Univ., Hsinchu, Taiwan ; Chang, W.H. ; Chiu, H.C. ; Chang, Y.H.
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For the first time, inversion-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a gate dielectric have been successfully fabricated, showing well-behaved drain I-V and transfer characteristics. The drain current was scaled with gate length, showing a maximum drain current of 10 mA/mm in a device of 1 mum gate length, at a gate voltage (Vgs) of 8 V and a drain voltage (Vds) of 10 V. High Ion/Ioff ratio of 2.5times105 was achieved with a very low off-state leakage of 4times10-13A/mum. In addition, depletion-mode (D-mode) GaN MOSFETs have also been demonstrated, showing a very low on-resistance of 2.5 mOmegaldrcm2, a high mobility of 350 cm2/Vs, and a high maximum drain current of 300 mA/mm in a device of 4 mum gate length.

Published in:

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Date of Conference:

27-29 April 2009