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Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

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10 Author(s)
S. Z. Rahaman ; Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan ; S. Maikap ; C. -H. Lin ; T. -Y. Wu
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Low current/voltage (~10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1 mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3times107, good endurance of >103 cycles, and excellent retention (>11 hours) with resistance ratio of > 9times103 can be useful in future non-volatile memory applications.

Published in:

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Date of Conference:

27-29 April 2009