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An integrated 0.35µm CMOS technology inductor for wideBand LNA application

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4 Author(s)
Ben Amor, M. ; Dept. of Electr. Eng., Nat. Eng. Sch. of Sfax, Sfax, Tunisia ; Loulou, M. ; Quintanel, S. ; Pasquet, D.

This paper presents the design of an integrated inductor with AMS CMOS 0.35 mum technology. This inductor is designed to ensure the wide band LNA circuit implementation on silicon. This inductor is designed with a coplanar transmission line. This line type achieves an inductance value of 0.38 nH on the whole operating frequency band from 2 to 6 GHz.

Published in:

Telecommunications, 2009. ICT '09. International Conference on

Date of Conference:

25-27 May 2009