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Improved SPICE macromodel of phase change random access memory

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6 Author(s)
Huan-Lin Chang ; Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C. ; Hung-Chih Chang ; Shang-Chi Yang ; Hsi-Chun Tsai
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This paper presents an improved SPICE macromodel of phase change random access memory (PCRAM). Based on the circuit-based model architecture in [1], the novelty of this work lies in (1) accurate modeling the current-voltage (I-V) plot including the snapback phenomenon, and (2) solution to the falling edge problem to avoid misrepresentation of the PCRAM state, and (3) calibration of the crystallization time for potential multilevel (ML) operation of the PCRAM.

Published in:

VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on

Date of Conference:

28-30 April 2009