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In this work, difference - temperature (DeltaT) sensors based on the Seebeck effect integrated into a common drain smart power MOSFET technology are presented. The sensors generate a voltage signal proportional to the DeltaT. The highest Seebeck coefficient measured was 0.92 mV/K. This result was achieved with a p - doped silicon and n+ - doped poly silicon Seebeck DeltaT sensor. Power MOSFETs with embedded Seebeck DeltaT sensors are, to our knowledge, demonstrated for the first time.