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The conventional clustered IGBT is a MOS controlled power device with controlled thyristor action, which has been demonstrated to show lower Vce(sat) compared to IGBT, current saturation characteristics at high gate voltages and short circuit performance. In this paper, we show that, with the incorporation additional PMOS trench gates in a normally planar gate structure, the performance of the device can be enhanced even further to tailor saturation current levels and hence improve short-circuit performance without degrading Vce(sat). This is evaluated using 1.2 kV planar NPT CIGBT through extensive 2D simulations. This is the first paper to demonstrate a simple mechanism to control the saturation current without degrading Vce(sat) and other characteristics.