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Low-loss rectifier by self-driven MOSFET with gate drive voltage control circuit

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7 Author(s)
Kagawa, Y. ; Mitsubishi Electr. Corp., Amagasaki, Japan ; Furukawa, A. ; Takeshita, M. ; Iwata, A.
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The low-loss self-driven rectifier we developed requires no external power supply and uses a novel CMOS control circuit that generates the power MOSFET drive signal by boosting the intrinsic body diode voltage drop. The rectifier significantly improved conduction loss - a 47% decrease from intrinsic-body-diode-based conduction loss - during half-wave rectification. It can replace with a common diode for a rectifier.

Published in:

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Date of Conference:

14-18 June 2009

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