Anodic aluminum oxide (AAO) with matrix arrays of pores was obtained using nanoimprint and anodizing. Si3N4 imprint stamps were fabricated using electron-beam lithography. The Si3N4 stamps were imprinted into Al films grown on Si wafers by applying a force of 250 kg for 10 s. Two different diameters (45 and 80 nm) and two different periodic distances (100 and 200 nm) of the square patterns in Si3N4 imprint stamp were transferred into an Al film as a form of shallow pores. The Al films were then anodized in 0.3M oxalic acid under conditions of 4 °C at 40 V. The authors found a linear relationship between the interpore distance and anodizing voltage (2.5 nm V-1) to obtain a square array in AAO. In addition, the matrix pores in AAO tend to form a natural hexagonal pattern as the anodizing time increases. The surface images are obtained using field-emission secondary-electron microscope and scanning probe microscopy.