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Asymmetric electrical properties of fork a-Si:H thin-film transistor and its application to flat panel displays

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4 Author(s)
Lee, Hojin ; Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109, USA ; Yoo, Geonwook ; Yoo, Juhn-Seok ; Kanicki, Jerzy

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Inverted stagger hydrogenated amorphous silicon (a-Si:H) fork-shaped thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active-matrix liquid crystal displays (AM-LCDs). We investigated the asymmetric electrical characteristics of a fork-shaped a-Si:H TFT under different bias conditions. To extract the electrical device parameters, we developed asymmetric geometrical factors. Current-voltage measurements indicate that the ON-OFF current ratio of fork TFT can be enhanced significantly by choosing the outer electrode as the drain, while the field-effect mobility and threshold voltage have the identical values when different drain bias conditions are used. Finally, we developed concepts of its possible application to AM-LCDs.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 12 )