By Topic

Detection of critical defects with E-beam technology for development and monitoring of advanced NAND processes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hayashi, H. ; Adv. Memory Dev. Center, Toshiba Corp., Yokkaichi, Japan ; Oomura, M. ; Ihata, N. ; Shinkawa, A.
more authors

This paper describes the technique of using electron beam inspection (EBI) for the purpose of detecting critical yield-limiting defects in the development of advanced NAND processes. Signal to noise analysis was conducted on a V1WCMP wafer of a NAND flash device to optimize e-beam conditions to obtain best sensitivity to DOI (defect of interest) detection. TEM analysis was performed to confirm detection of defects due to subtle and severe under-etch. Correlation of inspection results with split process conditions is demonstrated. Experiments were also carried out to determine the best inspection parameters to achieve highest throughput required for fast process development cycle time as well as production monitoring of advanced NAND flash memory manufacturing.

Published in:

Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI

Date of Conference:

10-12 May 2009