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Development of a TiN-CVD process with very high step coverage

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3 Author(s)
Ruhl, G. ; Infineon Technol. AG, Regensburg, Germany ; Krenzer, M. ; Batke, J.-M.

Current high-aspect ratio devices require deposition processes for conducting barrier and electrode films in vias and trenches with increasingly high aspect ratios. In this work we studied the extension of a CVD-TiN process based on the thermal deposition from TDEAT and NH3 in combination with subsequent plasma treatment. We investigated the process parameter space (including deposition temperature, pressure, NH3/TDEAT ratio and total gas flow) applying a DoE with respect to step coverage, deposition rate and electrical resistivity. One challenge is the quantitative determination of step coverage, which we overcame by using mapping Auger Electron Spectroscopy.

Published in:

Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI

Date of Conference:

10-12 May 2009

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