By Topic

Reduction of defects caused by chemical mechanical polishing of oxide surfaces and contamination of the wafer bevel

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Gallus, S.M. ; Infineon Technol. AG, Regensburg, Germany ; Niedermeier, F. ; Maue, M.

In recent years chemical mechanical polishing has become the most relevant planarization technique that is applied for technologies with structures below 0.35 mum. During the CMP process slurry ingredients like abrasive particles, additives and the polishing pad are continuously in direct contact with the wafer. Therefore CMP is also known as a source of critical defects like microscratches, slurry particles and other surface contaminations on the wafer. This paper describes CMP process and hardware improvements that were implemented in a continuous defect reduction project focussing on oxide CMP processes in the BEOL.

Published in:

Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI

Date of Conference:

10-12 May 2009