Cart (Loading....) | Create Account
Close category search window

In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kim, C.C. ; Synchrotron X-ray Laboratory (SXL), Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea ; Je, J.H. ; Yi, M.S. ; Noh, D.Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Interfacial microstructure in GaN nucleation layers was investigated using synchrotron x-ray scattering and transmission electron microscopy. We find that tensile-strained, aligned, interfacial domains coexist with misaligned domains in an as-grown nucleation layer of mostly cubic stacking. The tensile strain originates in a 6/7 matched interfacial structure, wherein 6-Ga atomic distances in GaN match to 7-Al atomic distances in sapphire. The tensile state of the aligned, interfacial domains is preserved during annealing to 1100 °C, while the stacking sequence changes from cubic to hexagonal order. The correlation length of the stacking order is rather short, ∼9 Å in the hexagonal phase, compared to that of the cubic phase in the as-grown nucleation layer, ∼25 Å, due to stacking faults generated during the kinetically limited transformation. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 5 )

Date of Publication:

Sep 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.